Semiconductor Device Simulation
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The primary reason to do the semiconductor device simulation is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques. It also helps to predict device operation at specific conditions such as applied bias (e.g., voltages and currents); environment (e.g., temperature, noise); and physical characteristics (e.g., geometry, doping levels). A comprehensive set of simulation tools and learning materials are available on nanoHub.org.
Basic Simulation for Understanding of Semiconductors & Devices
Crystal Structures and Lattices: An interactive visualization different Bravais lattices, crystal planes, and materials (diamond, silicon, indium arsenide, gallium arsenide, graphene, etc.
Carrier Density Distribution: It shows the electron and hole-density distributions based on the Fermi-Dirac and Maxwell-Boltzmann equations.
Drift and Diffusion of Carriers: It provides an intuitive view of carrier densities, transient and steady state currents, Fermi-levels and electrostatic potentials inside the semiconductor.
P-N Junction Devices: It provides the facility to explore the basic concepts of PN junction devices. The doping concentrations, device dimensions, minority-carrier lifetimes, and the ambient temperature can be changed to study the I-V,C-V and other characteristics of the diode.
Bipolar Junction Transistor (BJT): It allows to simulate both NPN and PNP transistors. The dimension, doping density, carrier life-time of Emitter, Base and Collector region can be changed to obtain the current gain, emitter efficiency, Early voltage and I-V chacteristics of the BJT.
MOSFET (Bulk & SOI): A comprehensive simulation setup to learn the I-V characteristics for bulk and SOI Field-Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature, and doping profiles.
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